Quantinuum H2 racetrack ion trap

Second-generation surface trap of the Quantinuum H-Series, based on a linear trap with periodic boundary conditions in a racetrack geometry, operating a QCCD (quantum charge-coupled device) architecture. Introduces electrode broadcasting, multi-layer RF routing via RF tunnels, and 2D magneto-optical trap loading in place of an effusive oven. Ions are trapped 70 µm below the trap surface. Uses abc electrode tiling for conveyor-belt ion transport, with storage regions and dedicated gate zones (DG01–DG04, UG01–UG04). Initially operated with 32 qubits, with headroom for future upgrades. Source: Moses et al., Phys. Rev. X 13, 041052 (2023), arXiv:2305.03828.

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